STP110N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

25 ns

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Power Dissipation :

150W

Drain to Source Breakdown Voltage :

100V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

150W Tc

Length :

10.4mm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

7m Ω @ 55A, 10V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Width :

4.6mm

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 50V

Continuous Drain Current (ID) :

110A

Vgs (Max) :

±20V

Height :

15.75mm

Number of Pins :

3

Resistance :

7mOhm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Radiation Hardening :

No

Element Configuration :

Single

Turn-Off Delay Time :

52 ns

Series :

DeepGATE™, STripFET™ VII

Package / Case :

TO-220-3

Base Part Number :

STP110