STP10P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

160m Ω @ 5A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

16.5 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Rise Time :

7ns

Factory Lead Time :

20 Weeks

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

Power Dissipation :

35W

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

40A

Base Part Number :

STP10

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Power Dissipation-Max :

30W Tc

Mount :

Through Hole

Continuous Drain Current (ID) :

10A

JEDEC-95 Code :

TO-220AB

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Case Connection :

DRAIN

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Operating Temperature :

175°C TJ

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Avalanche Energy Rating (Eas) :

80 mJ

Packaging :

Tube

Series :

DeepGATE™, STripFET™ VI