STP10NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Length :

10.4mm

Rise Time :

8ns

Continuous Drain Current (ID) :

4.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

FET Type :

N-Channel

Nominal Vgs :

3 V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Turn On Delay Time :

12 ns

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

650V

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

90W Tc

Packaging :

Tube

Width :

4.6mm

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Series :

MDmesh™ II

Drain Current-Max (Abs) (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Mounting Type :

Through Hole

Radiation Hardening :

No

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Lead Free :

Lead Free

Turn-Off Delay Time :

50 ns

Mount :

Through Hole

Transistor Application :

SWITCHING

Height :

15.75mm

Number of Elements :

1

Base Part Number :

STP10

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

Resistance :

480mOhm

Power Dissipation :

90W

Threshold Voltage :

3V