STP10NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Element Configuration :

Single

Mount :

Through Hole

Fall Time (Typ) :

9.8 ns

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

8A

Width :

4.6mm

Pin Count :

3

Number of Pins :

3

Vgs (Max) :

±25V

ECCN Code :

EAR99

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

70W Tc

Rise Time :

10ns

Base Part Number :

STP10

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

600m Ω @ 4A, 10V

Power Dissipation :

70W

Drain Current-Max (Abs) (ID) :

8A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Radiation Hardening :

No

Length :

10.4mm

Resistance :

470mOhm

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

9.2 ns

Mounting Type :

Through Hole

Lead Free :

Lead Free

FET Type :

N-Channel

Turn-Off Delay Time :

32 ns

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

577pF @ 50V

Height :

15.75mm

Drain to Source Breakdown Voltage :

650V

Series :

FDmesh™ II

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V