STP10NM60N
- Mfr.Part #
- STP10NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO220AB
- Stock
- 13,056
- In Stock :
- 13,056
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 50V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.4mm
- Turn On Delay Time :
- 10 ns
- Drain Current-Max (Abs) (ID) :
- 8A
- Terminal Finish :
- Matte Tin (Sn)
- Turn-Off Delay Time :
- 32 ns
- Continuous Drain Current (ID) :
- 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time :
- 16 Weeks
- Threshold Voltage :
- 3V
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Element Configuration :
- Single
- Mount :
- Through Hole
- Power Dissipation-Max :
- 70W Tc
- Lead Free :
- Lead Free
- Power Dissipation :
- 70W
- Number of Elements :
- 1
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Rise Time :
- 12ns
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Base Part Number :
- STP10
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 4A, 10V
- Series :
- MDmesh™ II
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 3
- Vgs (Max) :
- ±25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 15 ns
- Resistance :
- 550mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Width :
- 4.6mm
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Height :
- 15.75mm
- Datasheets
- STP10NM60N

N-Channel Tube 550m Ω @ 4A, 10V ±25V 540pF @ 50V 19nC @ 10V TO-220-3
STP10NM60N Description
The STP10NM60N device is an N-channel Power MOSFET built using MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charge in the world. As a result, it is well suited to the most demanding high efficiency converters.
STP10NM60N Features
? Avalanche-proofed to the nth degree
? Low gate charge and input capacitance
? Input gate resistance is low
STP10NM60N Applications
Switching applications
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