STP10NM60N

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Mfr.Part #
STP10NM60N
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO220AB
Stock
13,056
In Stock :
13,056

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 50V
Packaging :
Tube
FET Type :
N-Channel
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Length :
10.4mm
Turn On Delay Time :
10 ns
Drain Current-Max (Abs) (ID) :
8A
Terminal Finish :
Matte Tin (Sn)
Turn-Off Delay Time :
32 ns
Continuous Drain Current (ID) :
10A
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time :
16 Weeks
Threshold Voltage :
3V
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
200 mJ
Element Configuration :
Single
Mount :
Through Hole
Power Dissipation-Max :
70W Tc
Lead Free :
Lead Free
Power Dissipation :
70W
Number of Elements :
1
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Number of Pins :
3
Rise Time :
12ns
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Base Part Number :
STP10
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Rds On (Max) @ Id, Vgs :
550m Ω @ 4A, 10V
Series :
MDmesh™ II
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Terminations :
3
Vgs (Max) :
±25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
600V
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
15 ns
Resistance :
550mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
25V
Width :
4.6mm
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Pin Count :
3
Height :
15.75mm
Datasheets
STP10NM60N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP10NM60N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, Base Part Number:STP10, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, STP10NM60N pinout, STP10NM60N datasheet PDF, STP10NM60N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP10NM60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP10NM60N


N-Channel Tube 550m Ω @ 4A, 10V ±25V 540pF @ 50V 19nC @ 10V TO-220-3

STP10NM60N Description


The STP10NM60N device is an N-channel Power MOSFET built using MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charge in the world. As a result, it is well suited to the most demanding high efficiency converters.



STP10NM60N Features


? Avalanche-proofed to the nth degree


? Low gate charge and input capacitance


? Input gate resistance is low



STP10NM60N Applications


Switching applications


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