STP10NM50N
- Mfr.Part #
- STP10NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 7A TO220
- Stock
- 73,772
- In Stock :
- 73,772
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 25V
- Transistor Application :
- SWITCHING
- Height :
- 15.75mm
- JESD-609 Code :
- e3
- Base Part Number :
- STP10
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 70W Tc
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 7A
- Threshold Voltage :
- 3V
- Length :
- 10.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 7A
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 50V
- Rise Time :
- 4.4ns
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ II
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 28A
- Turn-Off Delay Time :
- 7.8 ns
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Rds On (Max) @ Id, Vgs :
- 630m Ω @ 3.5A, 10V
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Width :
- 4.6mm
- Turn On Delay Time :
- 7.8 ns
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 630mOhm
- Power Dissipation :
- 70W
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 12 ns
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Number of Pins :
- 3
- Datasheets
- STP10NM50N

N-Channel Tube 630m Ω @ 3.5A, 10V ±25V 450pF @ 50V 17nC @ 10V TO-220-3
STP10NM50N Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 450pF @ 50V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 7A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7.8 ns.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (10V).
STP10NM50N Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 7.8 ns
based on its rated peak drain current 28A.
a threshold voltage of 3V
STP10NM50N Applications
There are a lot of STMicroelectronics
STP10NM50N applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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