STP10NK80Z
- Mfr.Part #
- STP10NK80Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 9A TO220AB
- Stock
- 11,570
- In Stock :
- 11,570
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 4.6mm
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 17 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2180pF @ 25V
- Length :
- 10.4mm
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±30V
- Threshold Voltage :
- 3.75V
- Power Dissipation-Max :
- 190W Tc
- Base Part Number :
- STP10
- FET Type :
- N-Channel
- Turn On Delay Time :
- 30 ns
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 9A
- Number of Elements :
- 1
- Current Rating :
- 9A
- Number of Terminations :
- 3
- Series :
- SuperMESH™
- Power Dissipation :
- 160W
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 800V
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 4.5A, 10V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 65 ns
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mount :
- Through Hole
- Element Configuration :
- Single
- Resistance :
- 900mOhm
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Continuous Drain Current (ID) :
- 9A
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 800V
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Height :
- 9.15mm
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Rise Time :
- 20ns
- Datasheets
- STP10NK80Z

N-Channel Tube 900m Ω @ 4.5A, 10V ±30V 2180pF @ 25V 72nC @ 10V TO-220-3
STP10NK80Z Description
STP10NK80Z devices are N-channel Zener-protected Power MOSFETs created with STMicroelectronics' SuperMESHTM technology, which was achieved by optimizing ST's well-known strip-based PowerMESHTM structure. This device is designed to ensure a high degree of dv/dt capability for the most demanding applications, in addition to a significant reduction in onresistance.
STP10NK80Z Features
-
Exceptional dv/dt capabilities
-
Avalanche-proofed to the nth degree
-
Gate price is kept to a minimum.
-
Intrinsically low capacitances
-
Exceptional manufacturing reliability
STP10NK80Z Applications
Switching application
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