STP10NK80Z

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Mfr.Part #
STP10NK80Z
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 9A TO220AB
Stock
11,570
In Stock :
11,570

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Width :
4.6mm
Pin Count :
3
Transistor Element Material :
SILICON
Fall Time (Typ) :
17 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
2180pF @ 25V
Length :
10.4mm
Package / Case :
TO-220-3
Vgs (Max) :
±30V
Threshold Voltage :
3.75V
Power Dissipation-Max :
190W Tc
Base Part Number :
STP10
FET Type :
N-Channel
Turn On Delay Time :
30 ns
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Number of Pins :
3
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
9A
Number of Elements :
1
Current Rating :
9A
Number of Terminations :
3
Series :
SuperMESH™
Power Dissipation :
160W
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
800V
Rds On (Max) @ Id, Vgs :
900m Ω @ 4.5A, 10V
Radiation Hardening :
No
Turn-Off Delay Time :
65 ns
JEDEC-95 Code :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mount :
Through Hole
Element Configuration :
Single
Resistance :
900mOhm
Terminal Finish :
Matte Tin (Sn)
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Continuous Drain Current (ID) :
9A
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
800V
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
290 mJ
Height :
9.15mm
Factory Lead Time :
12 Weeks
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
4.5V @ 100μA
Rise Time :
20ns
Datasheets
STP10NK80Z
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP10NK80Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:STP10, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, STP10NK80Z pinout, STP10NK80Z datasheet PDF, STP10NK80Z amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP10NK80Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP10NK80Z


N-Channel Tube 900m Ω @ 4.5A, 10V ±30V 2180pF @ 25V 72nC @ 10V TO-220-3

STP10NK80Z Description


STP10NK80Z devices are N-channel Zener-protected Power MOSFETs created with STMicroelectronics' SuperMESHTM technology, which was achieved by optimizing ST's well-known strip-based PowerMESHTM structure. This device is designed to ensure a high degree of dv/dt capability for the most demanding applications, in addition to a significant reduction in onresistance.



STP10NK80Z Features


  • Exceptional dv/dt capabilities

  • Avalanche-proofed to the nth degree

  • Gate price is kept to a minimum.

  • Intrinsically low capacitances

  • Exceptional manufacturing reliability



STP10NK80Z Applications


Switching application


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