STI28N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

350 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain Current-Max (Abs) (ID) :

22A

Base Part Number :

STI28N

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 100V

Vgs (Max) :

±25V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.15Ohm

Surface Mount :

No

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

88A

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

170W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

150m Ω @ 11A, 10V

Case Connection :

DRAIN

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Series :

MDmesh™ M2

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

DS Breakdown Voltage-Min :

600V