STI260N6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

144.4 ns

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Elements :

1

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 25V

Pulsed Drain Current-Max (IDM) :

480A

Packaging :

Tube

Rise Time :

165ns

Power Dissipation :

300W

Length :

10.4mm

Resistance :

3mOhm

Pin Count :

3

Height :

10.75mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

120A Tc

ECCN Code :

EAR99

Element Configuration :

Single

Base Part Number :

STI260N

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

183nC @ 10V

Number of Terminations :

3

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Width :

4.6mm

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Series :

DeepGATE™, STripFET™ VI

Continuous Drain Current (ID) :

120A

Mount :

Through Hole

Pbfree Code :

yes

Turn On Delay Time :

31.4 ns

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

62.6 ns

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

75V

Rds On (Max) @ Id, Vgs :

3m Ω @ 60A, 10V

RoHS Status :

ROHS3 Compliant