STI22NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

74 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

DS Breakdown Voltage-Min :

600V

REACH SVHC :

No SVHC

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

16A

Vgs (Max) :

±30V

Power Dissipation :

125W

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

125W Tc

Threshold Voltage :

3V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

220m Ω @ 8A, 10V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

11 ns

Series :

MDmesh™ II

Mounting Type :

Through Hole

Pin Count :

3

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 50V

Terminal Position :

Single

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

64A

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

10.75mm

Width :

4.6mm

ECCN Code :

EAR99

Mount :

Through Hole

Nominal Vgs :

3 V

Base Part Number :

STI22N

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Fall Time (Typ) :

38 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.22Ohm