STI24N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Power Dissipation-Max :

150W Tc

Pulsed Drain Current-Max (IDM) :

72A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Fall Time (Typ) :

15 ns

Packaging :

Tube

Height :

9.35mm

Avalanche Energy Rating (Eas) :

180 mJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rise Time :

9ns

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 100V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

190m Ω @ 9A, 10V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Length :

10.4mm

Turn-Off Delay Time :

60 ns

Element Configuration :

Single

Drain-source On Resistance-Max :

0.19Ohm

Width :

4.6mm

Base Part Number :

STI24N

Case Connection :

DRAIN

Series :

MDmesh™ II Plus

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Pins :

3

Continuous Drain Current (ID) :

18A