STI23NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ II

Pin Count :

3

Base Part Number :

STI23N

Pbfree Code :

yes

Number of Terminations :

3

REACH SVHC :

No SVHC

Turn On Delay Time :

25 ns

Continuous Drain Current (ID) :

9.5A

Drain Current-Max (Abs) (ID) :

19A

Packaging :

Tube

Turn-Off Delay Time :

90 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

245

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.18ohm

Fall Time (Typ) :

36 ns

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Rds On (Max) @ Id, Vgs :

180m Ω @ 9.5A, 10V

Transistor Application :

SWITCHING

Mount :

Through Hole

FET Type :

N-Channel

Power Dissipation :

150W

Avalanche Energy Rating (Eas) :

700 mJ

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

76A

Number of Elements :

1

Radiation Hardening :

No

Power Dissipation-Max :

150W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

3V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rise Time :

15ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Terminal Finish :

MATTE TIN

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Transistor Element Material :

SILICON