STI24NM60N
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- Mfr.Part #
- STI24NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N CH 600V 17A I2PAK
- Stock
- 7,108
- In Stock ：
- 7,108
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 68A
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 50V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 4.6mm
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 8A, 10V
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Rise Time :
- 16.5ns
- Power Dissipation :
- 125W
- Fall Time (Typ) :
- 37 ns
- Number of Terminations :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Threshold Voltage :
- 3V
- Series :
- MDmesh™ II
- Vgs (Max) :
- ±30V
- Base Part Number :
- STI24N
- Length :
- 10.4mm
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 73 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Height :
- 10.75mm
- Drain to Source Voltage (Vdss) :
- 600V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 11.5 ns
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Power Dissipation-Max :
- 125W Tc
- Continuous Drain Current (ID) :
- 17A
- Datasheets
- STI24NM60N
N-Channel Tube 190m Ω @ 8A, 10V ±30V 1400pF @ 50V 46nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
STI24NM60N Overview
The maximum input capacitance of this device is 1400pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 73 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 68A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
STI24NM60N Features
a continuous drain current (ID) of 17A
the turn-off delay time is 73 ns
based on its rated peak drain current 68A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
STI24NM60N Applications
There are a lot of STMicroelectronics
STI24NM60N applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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