STI26NM60N
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- Mfr.Part #
- STI26NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A I2PAK
- Stock
- 6,094
- In Stock ：
- 6,094
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±25V
- Height :
- 10.75mm
- Pulsed Drain Current-Max (IDM) :
- 80A
- Avalanche Energy Rating (Eas) :
- 610 mJ
- Base Part Number :
- STI26N
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 20A
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 10A, 10V
- Turn On Delay Time :
- 13 ns
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 85 ns
- ECCN Code :
- EAR99
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 140W Tc
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 50V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.165Ohm
- Series :
- MDmesh™ II
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 25V
- DS Breakdown Voltage-Min :
- 600V
- Length :
- 10.4mm
- Number of Terminations :
- 3
- Packaging :
- Tube
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Datasheets
- STI26NM60N
N-Channel Tube 165m Ω @ 10A, 10V ±25V 1800pF @ 50V 60nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
STI26NM60N Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 610 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 50V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STI26NM60N Features
the avalanche energy rating (Eas) is 610 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 85 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
STI26NM60N Applications
There are a lot of STMicroelectronics
STI26NM60N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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