STI21N65M5
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- Mfr.Part #
- STI21N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 17A I2PAK
- Stock
- 694
- In Stock ：
- 694
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 17A
- Terminal Finish :
- Matte Tin (Sn)
- Series :
- MDmesh™ V
- Drain to Source Breakdown Voltage :
- 650V
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Width :
- 4.6mm
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Pin Count :
- 3
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Length :
- 10.4mm
- Rise Time :
- 10ns
- Gate to Source Voltage (Vgs) :
- 25V
- Fall Time (Typ) :
- 12 ns
- Nominal Vgs :
- 4 V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Power Dissipation-Max :
- 125W Tc
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 17 Weeks
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.19Ohm
- Threshold Voltage :
- 4V
- Height :
- 10.75mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 100V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Power Dissipation :
- 125W
- Rds On (Max) @ Id, Vgs :
- 179m Ω @ 8.5A, 10V
- Pulsed Drain Current-Max (IDM) :
- 68A
- Number of Elements :
- 1
- Base Part Number :
- STI21N
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Number of Terminations :
- 3
- Datasheets
- STI21N65M5
N-Channel Tube 179m Ω @ 8.5A, 10V ±25V 1950pF @ 100V 50nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STI21N65M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1950pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.There is a peak drain current of 68A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
STI21N65M5 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 650V voltage
based on its rated peak drain current 68A.
a threshold voltage of 4V
STI21N65M5 Applications
There are a lot of STMicroelectronics
STI21N65M5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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