STGFW20H65FB

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Mfr.Part #
STGFW20H65FB
Manufacturer
STMicroelectronics
Package / Case
TO-3PFM, SC-93-3
Datasheet
Download
Description
IGBT 650V 40A 52W TO3PF
Stock
205
In Stock :
205

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Collector Emitter Saturation Voltage :
1.55V
Max Collector Current :
40A
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 20A
Base Part Number :
STGFW20
Gate Charge :
120nC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Test Condition :
400V, 20A, 10 Ω, 15V
Gate-Emitter Thr Voltage-Max :
7V
Package / Case :
TO-3PFM, SC-93-3
Operating Temperature :
-55°C~175°C TJ
Switching Energy :
77μJ (on), 170μJ (off)
Weight :
6.961991g
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
650V
IGBT Type :
Trench Field Stop
Packaging :
Tube
Input Type :
Standard
Mount :
Through Hole
Current - Collector Pulsed (Icm) :
80A
Power - Max :
52W
Gate-Emitter Voltage-Max :
20V
Number of Pins :
3
Td (on/off) @ 25°C :
30ns/139ns
Collector Emitter Voltage (VCEO) :
650V
Max Power Dissipation :
52W
Factory Lead Time :
32 Weeks
Datasheets
STGFW20H65FB
Introducing Transistors - IGBTs - Single STMicroelectronics STGFW20H65FB from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STGFW20, Package / Case:TO-3PFM, SC-93-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, STGFW20H65FB pinout, STGFW20H65FB datasheet PDF, STGFW20H65FB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGFW20H65FB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGFW20H65FB


STGFW20H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGFW20H65FB Description


The STGFW20H65FB IGBT was developed using an advanced proprietary trench gate field stop structure. It is a  part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.



STGFW20H65FB Features


  • Maximum junction temperature: TJ = 175 °C

  • High-speed switching series

  • Minimized tail current

  • VCE(sat) = 1.55 V (typ.) @ IC = 20 A

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance



STGFW20H65FB Applications


  • Photovoltaic inverters

  • Power factor correction

  • Welding

  • High-frequency converters


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