STGF30H60DF
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- Mfr.Part #
- STGF30H60DF
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 60A 37W TO220FP
- Stock
- 26,001
- In Stock ：
- 26,001
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Power Dissipation :
- 37W
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Input Type :
- Standard
- Package / Case :
- TO-220-3 Full Pack
- Current - Collector Pulsed (Icm) :
- 120A
- Base Part Number :
- STGF30
- Td (on/off) @ 25°C :
- 50ns/160ns
- Switching Energy :
- 350μJ (on), 400μJ (off)
- Gate-Emitter Voltage-Max :
- 20V
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 30A
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Lead Free :
- Lead Free
- Max Collector Current :
- 60A
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 600V
- Packaging :
- Tube
- IGBT Type :
- Trench Field Stop
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~175°C TJ
- Element Configuration :
- Single
- Max Power Dissipation :
- 37W
- Gate Charge :
- 105nC
- Reverse Recovery Time :
- 110 ns
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2.4V
- Datasheets
- STGF30H60DF
STGF30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGF30H60DF Description
The STGF30H60DF is a Trench gate field-stop 600 V, 30 A high-speed IGBT developed using an advanced proprietary trench gate field stop structure.
STGF30H60DF Features
-
High-speed switching
-
Tight parameters distribution
-
Safe paralleling
-
Low thermal resistance
-
Short circuit rated
-
Ultrafast soft recovery antiparallel diode
STGF30H60DF Applications
-
Inverter
-
UPS
-
PFC
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