STGDL6NC60DIT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

6.7 ns

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Max Collector Current :

13A

Current - Collector Pulsed (Icm) :

18A

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Mounting Type :

Surface Mount

Number of Terminations :

2

Gate Charge :

12nC

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

122 ns

Pin Count :

3

Max Power Dissipation :

50W

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 3A

Turn-Off Delay Time :

67 ns

Terminal Form :

Gull wing

Base Part Number :

STGDL6

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Series :

PowerMESH™

Td (on/off) @ 25°C :

6.7ns/46ns

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Power - Max :

50W

Switching Energy :

32μJ (on), 24μJ (off)

Collector Emitter Voltage (VCEO) :

600V

Turn On Time :

10.5 ns

Packaging :

Tape and Reel (TR)

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

600V

Reverse Recovery Time :

23 ns

Max Breakdown Voltage :

600V

ECCN Code :

EAR99

Test Condition :

390V, 3A, 10 Ω, 15V

Gate-Emitter Thr Voltage-Max :

5.75V