STGD8NC60KDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Turn On Delay Time :

17 ns

Base Part Number :

STGD8

Radiation Hardening :

No

Turn On Time :

23 ns

Power - Max :

62W

Turn Off Time-Nom (toff) :

242 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Gate Charge :

19nC

Case Connection :

COLLECTOR

Width :

6.2mm

Td (on/off) @ 25°C :

17ns/72ns

Length :

6.6mm

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Max Collector Current :

15A

Mount :

Surface Mount

Height :

2.4mm

Max Power Dissipation :

62W

Input Type :

Standard

Weight :

350.003213mg

Series :

PowerMESH™

Current - Collector Pulsed (Icm) :

30A

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Surface Mount

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Reverse Recovery Time :

23.5 ns

Collector Emitter Voltage (VCEO) :

600V

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

Test Condition :

390V, 3A, 10 Ω, 15V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vce(on) (Max) @ Vge, Ic :

2.75V @ 15V, 3A

ECCN Code :

EAR99

Turn-Off Delay Time :

72 ns

Transistor Application :

POWER CONTROL

Switching Energy :

55μJ (on), 85μJ (off)

Number of Terminations :

2

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6.5V

Pin Count :

3