STGD7NB60ST4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Voltage - Rated DC :

600V

Switching Energy :

3.5mJ (off)

Radiation Hardening :

No

Current Rating :

7A

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

Turn On Time :

1160 ns

Contact Plating :

Tin

Element Configuration :

Single

Max Breakdown Voltage :

600V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

600V

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-252AA

Test Condition :

480V, 7A, 1k Ω, 15V

Gate Charge :

33nC

ECCN Code :

EAR99

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Thr Voltage-Max :

5V

Case Connection :

COLLECTOR

Max Power Dissipation :

55W

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

15A

Collector Emitter Saturation Voltage :

1.6V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

7A

Factory Lead Time :

8 Weeks

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

600V

Base Part Number :

STGD7

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 7A

Power Dissipation :

55W

Transistor Element Material :

SILICON

Mount :

Surface Mount

Series :

PowerMESH™

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

60A

Transistor Application :

Motor Control

Number of Terminations :

2

Mounting Type :

Surface Mount

Input Type :

Standard

Td (on/off) @ 25°C :

700ns/-