STGD7NB60KT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2.8V

Current - Collector Pulsed (Icm) :

56A

Number of Terminations :

2

Input Type :

Standard

ECCN Code :

EAR99

Turn Off Time-Nom (toff) :

202 ns

Max Collector Current :

14A

Gate Charge :

32.7nC

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

600V

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

7A

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Turn On Time :

21 ns

Td (on/off) @ 25°C :

15ns/50ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Power Dissipation :

70W

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Test Condition :

480V, 7A, 10 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 7A

Switching Energy :

95μJ (on), 140μJ (off)

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Breakdown Voltage :

600V

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Series :

PowerMESH™

Gate-Emitter Thr Voltage-Max :

7V

Base Part Number :

STGD7

Number of Elements :

1

Terminal Form :

Gull wing

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

20V

Voltage - Rated DC :

600V

Power Dissipation :

70W

Transistor Element Material :

SILICON