STGD6NC60HT4
- Mfr.Part #
- STGD6NC60HT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 15A 56W DPAK
- Stock
- 24,352
- In Stock :
- 24,352
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- STGD6
- Input Type :
- Standard
- Max Collector Current :
- 15A
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Test Condition :
- 390V, 3A, 10 Ω, 15V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Switching Energy :
- 20μJ (on), 68μJ (off)
- Turn On Time :
- 17.3 ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Collector Emitter Breakdown Voltage :
- 600V
- Max Power Dissipation :
- 56W
- Current - Collector Pulsed (Icm) :
- 21A
- Gate Charge :
- 13.6nC
- Collector Emitter Voltage (VCEO) :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 3A
- Turn Off Time-Nom (toff) :
- 222 ns
- JESD-609 Code :
- e3
- Transistor Application :
- POWER CONTROL
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1.9V
- Max Breakdown Voltage :
- 600V
- Gate-Emitter Voltage-Max :
- 20V
- Mount :
- Surface Mount
- Current Rating :
- 15A
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Power Dissipation :
- 56W
- Gate-Emitter Thr Voltage-Max :
- 5.75V
- Td (on/off) @ 25°C :
- 12ns/76ns
- Series :
- PowerMESH™
- Voltage - Rated DC :
- 600V
- Datasheets
- STGD6NC60HT4
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STGD6NC60HT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGD6NC60HT4 Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high-frequency application in order to achieve very high switching performances (reduced fall) manta in ing a low voltage drop.
STGD6NC60HT4 Features
Low on voltage drop (Viasat)
Low CRES / CIES ratio (no cross-conduction susceptibility)
High-frequency operation
STGD6NC60HT4 Applications
High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
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