STGD6NC60HDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Td (on/off) @ 25°C :

12ns/76ns

Voltage - Rated DC :

600V

Turn Off Time-Nom (toff) :

222 ns

Base Part Number :

STGD6

Turn-Off Delay Time :

40 ns

Turn On Time :

17.3 ns

Weight :

350.003213mg

Transistor Element Material :

SILICON

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Number of Terminations :

2

Lead Free :

Lead Free

Reverse Recovery Time :

21 ns

JEDEC-95 Code :

TO-252AA

Height :

2.4mm

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

50W

Current - Collector Pulsed (Icm) :

21A

ECCN Code :

EAR99

Max Breakdown Voltage :

600V

Transistor Application :

POWER CONTROL

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Collector Current :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

20V

Turn On Delay Time :

12 ns

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

600V

Test Condition :

390V, 3A, 10 Ω, 15V

Max Collector Current :

15A

Collector Emitter Saturation Voltage :

1.9V

Switching Energy :

20μJ (on), 68μJ (off)

Gate-Emitter Thr Voltage-Max :

5.75V

Peak Reflow Temperature (Cel) :

260

Current Rating :

15A

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 3A

Pin Count :

3

Length :

6.6mm

Max Power Dissipation :

56W

Series :

PowerMESH™

Collector Emitter Voltage (VCEO) :

600V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Width :

6.2mm

Factory Lead Time :

8 Weeks

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

Gate Charge :

13.6nC

Polarity/Channel Type :

N-Channel