STGD4M65DF2

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Mfr.Part #
STGD4M65DF2
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRENCH GATE FIELD-STOP IGBT, M S
Stock
9,313
In Stock :
9,313

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Power - Max :
68W
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
Reverse Recovery Time :
133ns
Base Part Number :
STGD4
Packaging :
Tape and Reel (TR)
Current - Collector Pulsed (Icm) :
16A
Voltage - Collector Emitter Breakdown (Max) :
650V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
30 Weeks
IGBT Type :
Trench Field Stop
Gate Charge :
15.2nC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
M
Test Condition :
400V, 4A, 47 Ω, 15V
Mounting Type :
Surface Mount
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 4A
Switching Energy :
40μJ (on), 136μJ (off)
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Td (on/off) @ 25°C :
12ns/86ns
Input Type :
Standard
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Current - Collector (Ic) (Max) :
8A
Datasheets
STGD4M65DF2
Introducing Transistors - IGBTs - Single STMicroelectronics STGD4M65DF2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:STGD4, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, STGD4M65DF2 pinout, STGD4M65DF2 datasheet PDF, STGD4M65DF2 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGD4M65DF2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGD4M65DF2


STGD4M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGD4M65DF2 Description


The STGD4M65DF2 IGBT was created using a cutting-edge, exclusive trench gate field-stop structure. The device is a member of the M series of IGBTs, which represent the performance and efficiency of an inverter system in which low-loss and short-circuit functionality are crucial. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operation.



STGD4M65DF2 Features


  • Safer paralleling

  • Low thermal resistance

  • Tight parameter distribution

  • VCE(sat) = 1.6 V (typ.) @ IC = 4 A

  • 6 μs of short-circuit withstand time

  • Soft and very fast recovery antiparallel diode



STGD4M65DF2 Applications


  • Automotive

  • Enterprise systems

  • Communications equipment 


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