STGD3NB60HDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Peak Reflow Temperature (Cel) :

260

Turn Off Time-Nom (toff) :

168 ns

Number of Terminations :

2

Turn On Time :

25 ns

Max Collector Current :

10A

Gate-Emitter Thr Voltage-Max :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

20V

Packaging :

Tape and Reel (TR)

Gate Charge :

21nC

Mounting Type :

Surface Mount

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.8V

Series :

PowerMESH™

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

600V

Power - Max :

50W

Terminal Form :

Gull wing

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 3A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Input Type :

Standard

Voltage - Rated DC :

600V

Transistor Application :

Motor Control

Polarity/Channel Type :

N-Channel

Switching Energy :

33μJ (off)

Configuration :

SINGLE WITH BUILT-IN DIODE

Reverse Recovery Time :

95 ns

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

24A

Base Part Number :

STGD3

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

600V

Terminal Finish :

Matte Tin (Sn)

Test Condition :

480V, 3A, 10 Ω, 15V

Td (on/off) @ 25°C :

5ns/53ns

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Number of Pins :

3

Mount :

Surface Mount

Continuous Drain Current (ID) :

6A

Current Rating :

6A

Max Power Dissipation :

50W