STGD3NB60FT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

150°C TJ

Td (on/off) @ 25°C :

12.5ns/105ns

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

600V

Switching Energy :

125μJ (off)

Max Breakdown Voltage :

600V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

2

Series :

PowerMESH™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

TIN LEAD

Pin Count :

3

Terminal Form :

Gull wing

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 3A

Qualification Status :

Not Qualified

Number of Pins :

3

Turn On Time :

16.5 ns

Power Dissipation :

60W

Max Power Dissipation :

60W

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

535 ns

Mount :

Surface Mount

Current Rating :

3A

Base Part Number :

STGD3

Reverse Recovery Time :

45ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Current - Collector Pulsed (Icm) :

24A

Input Type :

Standard

JESD-609 Code :

e0

Transistor Application :

Motor Control

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate-Emitter Thr Voltage-Max :

5V

Collector Emitter Saturation Voltage :

1.9V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

6A

Collector Emitter Voltage (VCEO) :

2.4V

Gate Charge :

16nC

Test Condition :

480V, 3A, 10 Ω, 15V