STFW6N120K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

ISOWATT218FX

Fall Time (Typ) :

32 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

20A

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Through Hole

Power Dissipation :

150W

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Power Dissipation-Max :

63W Tc

Drain to Source Breakdown Voltage :

1.2kV

Rise Time :

12ns

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

6A

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Transistor Application :

SWITCHING

Turn-Off Delay Time :

58 ns

Case Connection :

Isolated

Number of Terminations :

3

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

6A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 100µA

Resistance :

2.4Ohm

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 100V

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 2.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

JESD-609 Code :

e3

FET Type :

N-Channel

Packaging :

Tube

Base Part Number :

STFW

Drain to Source Voltage (Vdss) :

1200V

Contact Plating :

Tin

Series :

SuperMESH3™

Element Configuration :

Single

Radiation Hardening :

No