STFW60N65M5
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- Mfr.Part #
- STFW60N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 46A ISOWATT
- Stock
- 282
- In Stock ：
- 282
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 4V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Fall Time (Typ) :
- 16 ns
- Series :
- MDmesh™ V
- Width :
- 5.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 650V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 139nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 26.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6810pF @ 100V
- Power Dissipation :
- 79W
- Package / Case :
- ISOWATT218FX
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Vgs (Max) :
- ±25V
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Rise Time :
- 11ns
- Base Part Number :
- STFW
- Lead Free :
- Lead Free
- Length :
- 15.7mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 79W Tc
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 90 ns
- Rds On (Max) @ Id, Vgs :
- 59m Ω @ 23A, 10V
- Resistance :
- 59mOhm
- Turn-Off Delay Time :
- 13 ns
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 46A
- Datasheets
- STFW60N65M5
N-Channel Tube 59m Ω @ 23A, 10V ±25V 6810pF @ 100V 139nC @ 10V ISOWATT218FX
STFW60N65M5 Overview
A device's maximum input capacitance is 6810pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 46A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 13 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 90 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STFW60N65M5 Features
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 13 ns
a threshold voltage of 4V
STFW60N65M5 Applications
There are a lot of STMicroelectronics
STFW60N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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