STFW24N60M2

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Mfr.Part #
STFW24N60M2
Manufacturer
STMicroelectronics
Package / Case
TO-3PF
Datasheet
Download
Description
MOSFET N-CH 600V 18A TO3PF
Stock
39,815
In Stock :
39,815

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
6.961991g
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
25V
Series :
MDmesh™ II Plus
Power Dissipation-Max :
48W Tc
Length :
15.7mm
Factory Lead Time :
12 Weeks
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Number of Pins :
3
Fall Time (Typ) :
15 ns
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
14 ns
Packaging :
Tube
Drain to Source Breakdown Voltage :
600V
Mounting Type :
Through Hole
Vgs (Max) :
±25V
Rds On (Max) @ Id, Vgs :
190m Ω @ 9A, 10V
ECCN Code :
EAR99
Width :
5.7mm
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 100V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Base Part Number :
STFW
Continuous Drain Current (ID) :
18A
Height :
26.7mm
Turn-Off Delay Time :
60 ns
Rise Time :
9ns
Package / Case :
TO-3PF
Mount :
Through Hole
Number of Channels :
1
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
STFW24N60M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STFW24N60M2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:STFW, Package / Case:TO-3PF, Number of Channels:1, STFW24N60M2 pinout, STFW24N60M2 datasheet PDF, STFW24N60M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STFW24N60M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STFW24N60M2


N-Channel Tube 190m Ω @ 9A, 10V ±25V 1060pF @ 100V 29nC @ 10V TO-3PF

STFW24N60M2 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1060pF @ 100V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STFW24N60M2 Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns


STFW24N60M2 Applications


There are a lot of STMicroelectronics
STFW24N60M2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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