STFW38N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.7mm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

650V

Drain-source On Resistance-Max :

0.095Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Width :

5.7mm

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Height :

26.7mm

Gate to Source Voltage (Vgs) :

25V

Additional Feature :

ULTRA LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Packaging :

Tube

Case Connection :

Isolated

Number of Elements :

1

Number of Channels :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 100V

Series :

MDmesh™ V

Base Part Number :

STFW

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

30A

Mount :

Through Hole

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

95m Ω @ 15A, 10V

Package / Case :

ISOWATT218FX

Power Dissipation-Max :

57W Tc

Weight :

6.961991g

Avalanche Energy Rating (Eas) :

660 mJ

Element Configuration :

Single

Rise Time :

9ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED