STFW45N65M5
- Mfr.Part #
- STFW45N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 35A ISOWATT
- Stock
- 1,088
- In Stock :
- 1,088
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- DS Breakdown Voltage-Min :
- 650V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Part Number :
- STFW
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Pulsed Drain Current-Max (IDM) :
- 140A
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Continuous Drain Current (ID) :
- 35A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3470pF @ 100V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 57W Tc
- Drain to Source Voltage (Vdss) :
- 650V
- RoHS Status :
- ROHS3 Compliant
- Series :
- MDmesh™ V
- Case Connection :
- Isolated
- Terminal Position :
- Single
- Package / Case :
- ISOWATT218FX
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- Drain-source On Resistance-Max :
- 0.078Ohm
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 17.5A, 10V
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- Mount :
- Through Hole
- Datasheets
- STFW45N65M5

N-Channel Tube 78m Ω @ 17.5A, 10V ±25V 3470pF @ 100V 82nC @ 10V 650V ISOWATT218FX
STFW45N65M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.A device's maximum input capacitance is 3470pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 140A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 650V.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
STFW45N65M5 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 35A
based on its rated peak drain current 140A.
a 650V drain to source voltage (Vdss)
STFW45N65M5 Applications
There are a lot of STMicroelectronics
STFW45N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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