STFW4N150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mount :

Through Hole

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

4A

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

1.5kV

Resistance :

7Ohm

Terminal Position :

Single

Turn-Off Delay Time :

45 ns

Fall Time (Typ) :

45 ns

Height :

26.7mm

Lead Free :

Lead Free

Threshold Voltage :

4V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Operating Mode :

ENHANCEMENT MODE

Width :

5.7mm

Drain to Source Voltage (Vdss) :

1500V

Length :

15.7mm

Power Dissipation :

63W

Package / Case :

ISOWATT218FX

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain Current-Max (Abs) (ID) :

4A

Number of Elements :

1

Number of Terminations :

3

Turn On Delay Time :

35 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STFW

Radiation Hardening :

No

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

63W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

ECCN Code :

EAR99

Packaging :

Tube

Rise Time :

30ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

7 Ω @ 2A, 10V

Factory Lead Time :

8 Weeks

Operating Temperature :

150°C TJ

Contact Plating :

Tin

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Series :

PowerMESH™