STFW1N105K3

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Mfr.Part #
STFW1N105K3
Manufacturer
STMicroelectronics
Package / Case
ISOWATT218FX
Datasheet
Download
Description
MOSFET N-CH 1050V 1.4A ISOWATT
Stock
44,519
In Stock :
44,519

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Power Dissipation :
20W
Number of Pins :
3
Base Part Number :
STFW
Package / Case :
ISOWATT218FX
Length :
15.7mm
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
20W Tc
ECCN Code :
EAR99
Rise Time :
7ns
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Turn On Delay Time :
6 ns
Mount :
Through Hole
Series :
SuperMESH3™
Continuous Drain Current (ID) :
1.4A
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
11 Ω @ 600mA, 10V
Turn-Off Delay Time :
27 ns
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 100V
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Height :
26.7mm
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
1.05kV
Drain to Source Voltage (Vdss) :
1050V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
NRND (Last Updated: 8 months ago)
Width :
5.7mm
Mounting Type :
Through Hole
Fall Time (Typ) :
50 ns
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Datasheets
STFW1N105K3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STFW1N105K3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:STFW, Package / Case:ISOWATT218FX, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, STFW1N105K3 pinout, STFW1N105K3 datasheet PDF, STFW1N105K3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STFW1N105K3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STFW1N105K3


N-Channel Tube 11 Ω @ 600mA, 10V ±30V 180pF @ 100V 13nC @ 10V 1050V ISOWATT218FX

STFW1N105K3 Description

STMicroelectronics' STFW1N105K3 SuperMESH3TM Power MOSFETs are the result of improvements to SuperMESHTM technology, combined with an optimized vertical structure. With an extremely low on-resistance, superior dynamic performance, and high avalanche capability, the STFW1N105K3 is suitable for the most demanding applications.


STFW1N105K3 Features

  • Gate charge minimized

  • 100% avalanche tested

  • Extremely large avalanche performance

  • Very low intrinsic capacitance


STFW1N105K3 Applications

  • Switching applications

  • Audio preamplifier applications

  • Audio amplifier  applications

  • Darlington pairs


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