STFW3N170

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2.3A

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Continuous Drain Current (ID) :

2.6A

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Base Part Number :

STFW

Avalanche Energy Rating (Eas) :

2 mJ

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

DS Breakdown Voltage-Min :

1700V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

13 Ω @ 1.3A, 10V

Power Dissipation-Max :

63W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

ISOWATT218FX

Vgs (Max) :

±30V

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Number of Elements :

1

Mount :

Through Hole

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Case Connection :

Isolated

FET Type :

N-Channel

Series :

PowerMESH™

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

1700V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

10.4A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)