SS9018FBU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

5V

Published :

2007

Mount :

Through Hole

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

400mW

Transistor Element Material :

SILICON

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

15V

Collector Emitter Voltage (VCEO) :

15V

Transition Frequency :

1100MHz

Factory Lead Time :

2 Weeks

Number of Pins :

3

Transistor Application :

AMPLIFIER

Weight :

179mg

Current Rating :

50mA

Pbfree Code :

yes

hFE Min :

28

Polarity/Channel Type :

NPN

Number of Elements :

1

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

50mA

Max Collector Current :

50mA

Packaging :

Bulk

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Terminations :

3

Power Dissipation :

400mW

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

54 @ 1mA 5V

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

30V

Frequency :

1.1GHz

Terminal Position :

BOTTOM

ECCN Code :

EAR99