SP8M9TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

5A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

TIN COPPER

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 10V

Transistor Element Material :

SILICON

Number of Terminations :

8

Number of Pins :

8

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

9A

Pulsed Drain Current-Max (IDM) :

36A

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

9A 5A

Published :

2004

DS Breakdown Voltage-Min :

30V

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rise Time :

30ns

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

*M9

Mount :

Surface Mount

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.025Ohm

Packaging :

Tape and Reel (TR)

Current Rating :

9A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

FET Type :

N and P-Channel