SP8M8FU6TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2007

Drain to Source Breakdown Voltage :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

*M8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Fall Time (Typ) :

25 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Rise Time :

25ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 10V

Resistance :

47mOhm

Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

2W

Turn-Off Delay Time :

60 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

4.5A

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Drain Current-Max (Abs) (ID) :

6A

Gate Charge (Qg) (Max) @ Vgs :

10.1nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

6A 4.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)