SP8M5TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Terminal Position :

Dual

Number of Pins :

8

Published :

2004

Terminal Finish :

TIN COPPER

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

FET Type :

N and P-Channel

FET Feature :

Logic Level Gate

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

6A 7A

Drain Current-Max (Abs) (ID) :

6A

Transistor Application :

SWITCHING

Pin Count :

8

Current Rating :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 5V

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.047Ohm

JESD-609 Code :

e2

Base Part Number :

*M5

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Continuous Drain Current (ID) :

7A

Lead Free :

Lead Free

Rise Time :

50ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

24A

DS Breakdown Voltage-Min :

30V

Max Power Dissipation :

2W

ECCN Code :

EAR99

Number of Elements :

2

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant