SIS488DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 20A, 10V

Avalanche Energy Rating (Eas) :

20 mJ

Turn On Delay Time :

22 ns

Continuous Drain Current (ID) :

40A

Rise Time :

65ns

Published :

2015

Resistance :

5.5mOhm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs (Max) :

±20V

Turn-Off Delay Time :

24 ns

Mount :

Surface Mount

Package / Case :

PowerPAK® 1212-8

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Terminal Form :

C BEND

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Case Connection :

DRAIN

Terminal Position :

Dual

Transistor Element Material :

SILICON

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Element Configuration :

Single

Fall Time (Typ) :

9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

40V

Power Dissipation-Max :

3.7W Ta 52W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Transistor Application :

SWITCHING

JESD-30 Code :

S-PDSO-C5

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount