SIS412DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

24mOhm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 15V

Fall Time (Typ) :

10 ns

Width :

3.05mm

Factory Lead Time :

14 Weeks

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Rise Time :

12ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 7.8A, 10V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Power Dissipation :

15.6W

Transistor Element Material :

SILICON

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

30A

Turn On Delay Time :

5 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

8.7A

Case Connection :

DRAIN

Mount :

Surface Mount

Radiation Hardening :

No

Terminal Position :

Dual

Number of Channels :

1

Nominal Vgs :

1 V

Series :

TrenchFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

JESD-30 Code :

S-XDSO-C5

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Turn-Off Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Length :

3.05mm

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Terminal Finish :

MATTE TIN

Published :

2013

Number of Pins :

8

Power Dissipation-Max :

3.2W Ta 15.6W Tc

Lead Free :

Lead Free

Package / Case :

PowerPAK® 1212-8

Height :

1.17mm

Operating Mode :

ENHANCEMENT MODE