SIS427EDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

1930pF @ 15V

Turn-Off Delay Time :

28 ns

Element Configuration :

Single

REACH SVHC :

Unknown

Published :

2016

Continuous Drain Current (ID) :

-50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Drain to Source Breakdown Voltage :

-30V

Number of Elements :

1

Number of Pins :

8

JESD-30 Code :

S-PDSO-C5

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10.6m Ω @ 11A, 10V

Packaging :

Tape and Reel (TR)

Rise Time :

40ns

Turn On Delay Time :

45 ns

Power Dissipation-Max :

3.7W Ta 52W Tc

Fall Time (Typ) :

12 ns

Terminal Position :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Mount :

Surface Mount

Package / Case :

PowerPAK® 1212-8

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING