SIS424DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

S-XDSO-C5

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Series :

TrenchFET®

Radiation Hardening :

No

Length :

3.05mm

Terminal Form :

C BEND

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Height :

1.04mm

Continuous Drain Current (ID) :

35A

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

60A

Turn-Off Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Factory Lead Time :

15 Weeks

Fall Time (Typ) :

10 ns

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 19.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Position :

Dual

Width :

3.05mm

Drain-source On Resistance-Max :

0.0064Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

3.7W Ta 39W Tc

Case Connection :

DRAIN

JESD-609 Code :

e3

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

45 mJ

FET Type :

N-Channel

Published :

2013

Pin Count :

8

Number of Pins :

8

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® 1212-8

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Transistor Application :

SWITCHING

Rise Time :

13ns