SIS415DNT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

-1.5V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Package / Case :

PowerPAK® 1212-8

Rise Time :

38ns

Case Connection :

DRAIN

Continuous Drain Current (ID) :

35A

Transistor Application :

SWITCHING

Power Dissipation :

3.7W

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Transistor Element Material :

SILICON

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.004ohm

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5460pF @ 10V

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

Number of Terminations :

5

Published :

2014

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Avalanche Energy Rating (Eas) :

20 mJ

Mounting Type :

Surface Mount

Series :

TrenchFET®

JESD-30 Code :

S-PDSO-F5

Terminal Form :

Flat

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Power Dissipation-Max :

3.7W Ta 52W Tc

Drain to Source Breakdown Voltage :

-20V

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Turn-Off Delay Time :

82 ns

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant