SIS413DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-C5

Max Junction Temperature (Tj) :

150°C

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 15A, 10V

Number of Terminations :

5

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

70A

Number of Elements :

1

Power Dissipation-Max :

3.7W Ta 52W Tc

Number of Pins :

8

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

20 mJ

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

-14.7A

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4280pF @ 15V

Threshold Voltage :

-2.5V

ECCN Code :

EAR99

Series :

TrenchFET®

Power Dissipation :

3.7W

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

45 ns

Package / Case :

PowerPAK® 1212-8

Rise Time :

11ns

Fall Time (Typ) :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain-source On Resistance-Max :

0.0094Ohm

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Terminal Form :

C BEND

Radiation Hardening :

No

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-30V

Element Configuration :

Single

Published :

2015

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Height :

1.17mm