SIS402DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Number of Pins :

8

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

35A Tc

DS Breakdown Voltage-Min :

30V

Width :

3.05mm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

REACH SVHC :

Unknown

Series :

TrenchFET®

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

70A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

JESD-30 Code :

S-XDSO-C5

Pin Count :

8

Length :

3.05mm

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Radiation Hardening :

No

Turn On Delay Time :

25 ns

Number of Channels :

1

Number of Elements :

1

Turn-Off Delay Time :

25 ns

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

C BEND

Power Dissipation :

3.8W

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

6mOhm

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6m Ω @ 19A, 10V

Published :

2016

Rise Time :

20ns

Threshold Voltage :

3V

Pbfree Code :

yes

FET Type :

N-Channel

Package / Case :

PowerPAK® 1212-8

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.8W Ta 52W Tc

Terminal Position :

Dual

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Height :

1.04mm

JESD-609 Code :

e3