SIS410DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Turn On Delay Time :

25 ns

Transistor Element Material :

SILICON

Published :

2013

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-30 Code :

S-PDSO-C5

Length :

3.05mm

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Rise Time :

15ns

Pin Count :

8

Width :

3.05mm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Fall Time (Typ) :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 10V

Threshold Voltage :

1.2V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

5.2W

FET Type :

N-Channel

Element Configuration :

Single

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

C BEND

Power Dissipation-Max :

3.8W Ta 52W Tc

Operating Temperature :

-55°C~150°C TJ

Height :

1.04mm

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Drain Current-Max (Abs) (ID) :

22A

Continuous Drain Current (ID) :

35A

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 20A, 10V

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Number of Terminations :

5

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Turn-Off Delay Time :

30 ns

Vgs (Max) :

±20V

Number of Pins :

8

Radiation Hardening :

No

Package / Case :

PowerPAK® 1212-8

Resistance :

4.8mOhm