SIS478DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Radiation Hardening :

No

Element Configuration :

Single

Package / Case :

PowerPAK® 1212-8

Continuous Drain Current (ID) :

12A

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

5 mJ

Vgs (Max) :

±25V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

8

FET Type :

N-Channel

Threshold Voltage :

1.2V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.2W

Terminal Position :

Dual

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.02Ohm

Published :

2008

Power Dissipation-Max :

15.6W Tc

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-C5

Input Capacitance (Ciss) (Max) @ Vds :

398pF @ 15V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

40A

Terminal Form :

C BEND

Terminal Finish :

MATTE TIN

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V