SIS472ADN-T1-GE3

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Mfr.Part #
SIS472ADN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET N-CH 30V 24A PPAK1212-8
Stock
5,917
In Stock :
5,917

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
8.5m Ω @ 10A, 10V
Continuous Drain Current (ID) :
15A
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Power Dissipation :
3.5W
Factory Lead Time :
14 Weeks
Configuration :
Single
Power Dissipation-Max :
28W Tc
Vgs(th) (Max) @ Id :
2.4V @ 250μA
Mounting Type :
Surface Mount
Number of Channels :
1
Resistance :
8.5mOhm
Input Capacitance (Ciss) (Max) @ Vds :
1515pF @ 15V
Published :
2017
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
Unknown
Drain to Source Voltage (Vdss) :
30V
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
24A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
PowerPAK® 1212-8
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Datasheets
SIS472ADN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIS472ADN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® 1212-8, SIS472ADN-T1-GE3 pinout, SIS472ADN-T1-GE3 datasheet PDF, SIS472ADN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIS472ADN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIS472ADN-T1-GE3


N-Channel Tape & Reel (TR) 8.5m Ω @ 10A, 10V ±20V 1515pF @ 15V 44nC @ 10V 30V PowerPAK® 1212-8

SIS472ADN-T1-GE3 Overview


A device's maximum input capacitance is 1515pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 24A, and it is the maximum continuous current the device can conduct.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SIS472ADN-T1-GE3 Features


a continuous drain current (ID) of 15A
a 30V drain to source voltage (Vdss)


SIS472ADN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIS472ADN-T1-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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