SIS468DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

30A

Drain to Source Breakdown Voltage :

80V

Number of Channels :

1

Height :

1.12mm

Case Connection :

DRAIN

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Junction Temperature (Tj) :

150°C

Package / Case :

PowerPAK® 1212-8

Number of Pins :

8

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn-Off Delay Time :

15 ns

Series :

TrenchFET®

JESD-30 Code :

S-PDSO-C5

Width :

3.4mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.7W Ta 52W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.4mm

Threshold Voltage :

1.5V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Terminal Form :

C BEND

Avalanche Energy Rating (Eas) :

5 mJ

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

9.8A

Power Dissipation :

3.7W

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 10A, 10V

Radiation Hardening :

No

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

Turn On Delay Time :

8 ns

Resistance :

19.5MOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Published :

2013

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 40V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Elements :

1