SIS456DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 15V

ECCN Code :

EAR99

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

12 ns

Package / Case :

PowerPAK® 1212-8

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 52W Tc

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

S-PDSO-C5

Terminal Position :

Dual

Transistor Application :

SWITCHING

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 20A, 10V

Mounting Type :

Surface Mount

Published :

2013

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

20 ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

25 ns

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

35A

Rise Time :

25ns

Case Connection :

DRAIN

Mount :

Surface Mount

REACH SVHC :

Unknown

Terminal Finish :

MATTE TIN

Factory Lead Time :

15 Weeks

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Series :

TrenchFET®

Power Dissipation :

3.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Type :

N-Channel

Element Configuration :

Single

Vgs (Max) :

±20V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

RoHS Status :

ROHS3 Compliant